Infineon Technologies AG 120V 100A TO220 MOSFET Transistor IPP048N12N3G

Description
MOSFET N-CH 120V 100A TO220-3 Product overview: IPP048N12N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, 100A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP048N12N3G can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 120V 100A TO220-3 Product overview: IPP048N12N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, 100A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP048N12N3G can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
120V 100A TO220 MOSFET Transistor
285-IPP048N12N3G
120V 100A TO220 MOSFET Transistor 285-IPP048N12N3G
MOSFET N-CH 120V 100A TO220-3 Product overview: IPP048N12N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, 100A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP048N12N3G can be used for catalog matching and distributor lookup.

MOSFET N-CH 120V 100A TO220-3 Product overview: IPP048N12N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, 100A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP048N12N3G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP048N12N3G - 069032-IPP048N12N3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP048N12N3G
069032-IPP048N12N3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP048N12N3G 069032-IPP048N12N3G
Manufacturer: Infineon Technologies Win Source Part Number: 069032-IPP048N12N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 120V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 4V @ 230μA Max Gate Charge: 182nC @ 10V Max Input Capacitance: 12000pF @ 60V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.8 mOhm @ 100A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069032-IPP048N12N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 120V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 230μA
Max Gate Charge: 182nC @ 10V
Max Input Capacitance: 12000pF @ 60V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-IPP048N12N3G 069032-IPP048N12N3G
Product Name 120V 100A TO220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP048N12N3G
Polarity N-Channel N-Channel; N-Channel
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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