Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP027N08N5 IPP027N08N5

Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC)
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP027N08N5 - IPP027N08N5 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP027N08N5 - 1186283-IPP027N08N5 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP027N08N5 - IPP027N08N5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP027N08N5
IPP027N08N5
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP027N08N5 IPP027N08N5
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC)

OptiMOS™ 5 power MOSFET 80V for telecom applications

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Adapter

Applications

  • 48 V intermediate bus converter (IBC)
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP027N08N5 - 1186283-IPP027N08N5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP027N08N5
1186283-IPP027N08N5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP027N08N5 1186283-IPP027N08N5
Manufacturer: Infineon Technologies Win Source Part Number: 1186283-IPP027N08N5 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186283-IPP027N08N5
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
MOSFET Transistor
285-IPP027N08N5
MOSFET Transistor 285-IPP027N08N5
Ideal for high frequency switching and sync. rec Product overview: IPP027N08N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP027N08N5 can be used for catalog matching and distributor lookup.

Ideal for high frequency switching and sync. rec Product overview: IPP027N08N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP027N08N5 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP027N08N5 1186283-IPP027N08N5 285-IPP027N08N5
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP027N08N5 TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP027N08N5 MOSFET Transistor
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0027 ohms
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