Infineon Technologies AG Single FETs, MOSFETs IPP13N03LB G

Description
N-Channel 30V 30A (Tc) 52W (Tc) Through Hole PG-TO220-3-1
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Description
N-Channel 30V 30A (Tc) 52W (Tc) Through Hole PG-TO220-3-1
Request a Quote Datasheet

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Single FETs, MOSFETs - IPP13N03LBG-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP13N03LBG-ND
Single FETs, MOSFETs IPP13N03LBG-ND
N-Channel 30V 30A (Tc) 52W (Tc) Through Hole PG-TO220-3-1

N-Channel 30V 30A (Tc) 52W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP13N03LB G - 776907-IPP13N03LB G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP13N03LB G
776907-IPP13N03LB G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP13N03LB G 776907-IPP13N03LB G
Manufacturer: Infineon Technologies Win Source Part Number: 776907-IPP13N03LB G Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Part Status: Obsolete(EOL) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PG-TO220-3-1 Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2V @ 20μA Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 1355pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 52W (Tc) Rds On (Maximum) @ Id, Vgs: 12.8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 776907-IPP13N03LB G
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TO220-3-1
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2V @ 20μA
Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 1355pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 52W (Tc)
Rds On (Maximum) @ Id, Vgs: 12.8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP13N03LBG-ND 776907-IPP13N03LB G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP13N03LB G
Polarity N-Channel
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