Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP47N10S33AKSA1 IPP47N10S33AKSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045994-IPP47N10S33A KSA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 47A (Tc) Gate-Source Threshold Voltage: 4V @ 2mA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 33A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 500
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045994-IPP47N10S33A KSA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 47A (Tc) Gate-Source Threshold Voltage: 4V @ 2mA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 33A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 500
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP47N10S33AKSA1 - 1045994-IPP47N10S33AKSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP47N10S33AKSA1
1045994-IPP47N10S33AKSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP47N10S33AKSA1 1045994-IPP47N10S33AKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045994-IPP47N10S33A KSA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 47A (Tc) Gate-Source Threshold Voltage: 4V @ 2mA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 33A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 500

Manufacturer: Infineon Technologies
Win Source Part Number: 1045994-IPP47N10S33AKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 175W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 4V @ 2mA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 2500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 33 mOhm @ 33A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 500

Buy Now Datasheet
Single FETs, MOSFETs - IPP47N10S33AKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP47N10S33AKSA1-ND
Single FETs, MOSFETs IPP47N10S33AKSA1-ND
N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-TO220-3-1

N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP47N10S33AKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP47N10S33AKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP47N10S33AKSA1
MOSFET N-CH 100V 47A TO220-3

MOSFET N-CH 100V 47A TO220-3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1045994-IPP47N10S33AKSA1 IPP47N10S33AKSA1-ND IPP47N10S33AKSA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP47N10S33AKSA1 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 175000 milliwatts
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