MOSFET N-CH 200V 84A TO220-3 Product overview: IPP120N20NFDAKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 84A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 84A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP120N20NFDAKSA
Win Source Part Number: 1065290-IPP120N20NFD
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPP075N15N3GXKSA1; IPP110N20NAAKSA1; IPP110N20N3GXKSA1; FDP083N15A_F102; FDP2614; STP75NF20IPP120N20NF
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: INFINFIPP120N20NFDAK
Base Product Number: IPP120
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 200V 84A (Tc) 300W (Tc) Through Hole PG-TO220-3
MOSFET N-Ch 200V 84A TO220-3
MOSFET N-CH 200V 84A TO220-3
IPP120N20NFD Series 200 V 84 A OptiMOS?FD Power Transistor MOSFET - TO-220-3
MOSFET, N-CH, 200V, 84A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPP120N20NFDAKSA1 | 2605154 | 1065290-IPP120N20NFDAKSA1 | IPP120N20NFDAKSA1-ND | IPP120N20NFDAKSA1 | IPP120N20NFDAKSA1 | 376-IPP120N20NFDAKSA1 | 50Y2062 |
| Product Name | 200V 84A TO220 MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | IPP120N20NFD Series 200 V 84 A OptiMOS?FD Power Transistor MOSFET - TO-220-3 | Mosfet, N-Ch, 200V, 84A, To-220; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 200 volts | |||||||
| Transconductance | 0.0700 kS | |||||||
| PD | 300 milliwatts | 300000 milliwatts | 300000 milliwatts |
