N-Channel 100V 73A (Tc) 100W (Tc) Through Hole PG-TO220-3
Win Source Part Number: 967759-IPP083N10N5AK
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Power Dissipation (Max): 100W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-IPP083N10N5AKSA
Base Product Number: IPP083
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 100V 73A TO220-3 Product overview: IPP083N10N5AKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 73A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 73A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP083N10N5AKSA1
MOSFET, N-CH, 100V, 73A, TO-220, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:73A, DRAIN SOURCE VOLTAGE VDS:100V, ON RESISTANCE RDS(ON):0.0073OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:3V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 73A TO220-3
MOSFET, N-CH, 100V, 73A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPP083N10N5AKSA1-ND | 967759-IPP083N10N5AKSA1 | 278-IPP083N10N5AKSA1 | 108052874 | IPP083N10N5AKSA1 | 13AC9070 | IPP083N10N5AKSA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 100V 73A TO220 MOSFET Transistor | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 73A, To-220; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | SOT3 | Tube | TO-220; TO-220-3 | TO-3; TO-220 | ||
| PD | 100000 milliwatts | 100 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| MOSFET Operating Mode | Enhancement |
