Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPP120N06S4H1AKSA2

Description
Win Source Part Number: 1003365-IPP120N06S4H 1AKSA2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, OptiMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001028780,INFINFIP P120N06S4H1AKSA2,215 6-IPP120N06S4H1AKSA2 Base Product Number: IPP120N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1003365-IPP120N06S4H 1AKSA2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, OptiMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001028780,INFINFIP P120N06S4H1AKSA2,215 6-IPP120N06S4H1AKSA2 Base Product Number: IPP120N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1003365-IPP120N06S4H1AKSA2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1003365-IPP120N06S4H1AKSA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1003365-IPP120N06S4H1AKSA2
Win Source Part Number: 1003365-IPP120N06S4H 1AKSA2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, OptiMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001028780,INFINFIP P120N06S4H1AKSA2,215 6-IPP120N06S4H1AKSA2 Base Product Number: IPP120N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1003365-IPP120N06S4H1AKSA2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001028780,INFINFIPP120N06S4H1AKSA2,2156-IPP120N06S4H1AKSA2
Base Product Number: IPP120N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IPP120N06S4H1AKSA2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP120N06S4H1AKSA2-ND
Single FETs, MOSFETs IPP120N06S4H1AKSA2-ND
N-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1

N-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
MOSFET N-CH 60V 120A TO220-3 - 376-IPP120N06S4H1AKSA2 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 120A TO220-3
376-IPP120N06S4H1AKSA2
MOSFET N-CH 60V 120A TO220-3 376-IPP120N06S4H1AKSA2
MOSFET N-CH 60V 120A TO220-3

MOSFET N-CH 60V 120A TO220-3

Supplier's Site
MOSFET MOSFET

MOSFET MOSFET

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP120N06S4H1AKSA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP120N06S4H1AKSA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP120N06S4H1AKSA2
MOSFET N-CH 60V 120A TO220-3

MOSFET N-CH 60V 120A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1003365-IPP120N06S4H1AKSA2 IPP120N06S4H1AKSA2-ND 376-IPP120N06S4H1AKSA2 IPP120N06S4H1AKSA2 IPP120N06S4H1AKSA2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET N-CH 60V 120A TO220-3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 250000 milliwatts 250000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 TO-220; TO-220-3 Through Hole
Transistor Grade / Operating Range Automotive
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