Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPP120N06S4H1AKSA2

Description
Win Source Part Number: 1003365-IPP120N06S4H 1AKSA2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, OptiMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001028780,INFINFIP P120N06S4H1AKSA2,215 6-IPP120N06S4H1AKSA2 Base Product Number: IPP120N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1003365-IPP120N06S4H1AKSA2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPP120N06S4H1AKSA2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP120N06S4H1AKSA2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 60V 120A TO220-3 - 376-IPP120N06S4H1AKSA2 - Utmel Electronic Limited
    Utmel Electronic Limited
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Description
Win Source Part Number: 1003365-IPP120N06S4H 1AKSA2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, OptiMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001028780,INFINFIP P120N06S4H1AKSA2,215 6-IPP120N06S4H1AKSA2 Base Product Number: IPP120N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1003365-IPP120N06S4H1AKSA2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1003365-IPP120N06S4H1AKSA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1003365-IPP120N06S4H1AKSA2
Win Source Part Number: 1003365-IPP120N06S4H 1AKSA2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, OptiMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001028780,INFINFIP P120N06S4H1AKSA2,215 6-IPP120N06S4H1AKSA2 Base Product Number: IPP120N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1003365-IPP120N06S4H1AKSA2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001028780,INFINFIPP120N06S4H1AKSA2,2156-IPP120N06S4H1AKSA2
Base Product Number: IPP120N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IPP120N06S4H1AKSA2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP120N06S4H1AKSA2-ND
Single FETs, MOSFETs IPP120N06S4H1AKSA2-ND
N-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1

N-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP120N06S4H1AKSA2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP120N06S4H1AKSA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP120N06S4H1AKSA2
MOSFET N-CH 60V 120A TO220-3

MOSFET N-CH 60V 120A TO220-3

Supplier's Site
MOSFET N-CH 60V 120A TO220-3 - 376-IPP120N06S4H1AKSA2 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 120A TO220-3
376-IPP120N06S4H1AKSA2
MOSFET N-CH 60V 120A TO220-3 376-IPP120N06S4H1AKSA2
MOSFET N-CH 60V 120A TO220-3

MOSFET N-CH 60V 120A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP120N06S4H1AKSA2
MOSFET IPP120N06S4H1AKSA2
MOSFET MOSFET

MOSFET MOSFET

Buy Now

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1003365-IPP120N06S4H1AKSA2 IPP120N06S4H1AKSA2-ND IPP120N06S4H1AKSA2 376-IPP120N06S4H1AKSA2 IPP120N06S4H1AKSA2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 60V 120A TO220-3 MOSFET
Polarity N-Channel N-Channel
PD 250000 milliwatts 250000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 TO-220; TO-220-3 Through Hole
Transistor Grade / Operating Range Automotive
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