Infineon Technologies AG Single FETs, MOSFETs IPP100N06S2L05AKSA2

N-Channel 55V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET N-CH 55V 100A TO220-3 Product overview: IPP100N06S2L05AKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 100A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP100N06S2L05AKSA2 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 126376-IPP100N06S2L05AKSA2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 5660pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance