N-Channel 100V 120A (Tc) 375W (Tc) Through Hole PG-TO220-3
Manufacturer: Infineon Technologies
Win Source Part Number: 1045948-IPP023N10N5A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 270μA
Max Gate Charge: 210nC @ 10V
Max Input Capacitance: 15600pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.3 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 120A TO220-3 Product overview: IPP023N10N5AKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP023N10N5AKSA1
MOSFET N-Ch 100V 120A TO220-3
MOSFET, N-CH, 100V, 120A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 120A TO220-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 448-IPP023N10N5AKSA1-ND | 1045948-IPP023N10N5AKSA1 | 278-IPP023N10N5AKSA1 | IPP023N10N5AKSA1 | 97Y1838 | IPP023N10N5AKSA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP023N10N5AKSA1 | 100V 120A TO220 MOSFET Transistor | MOSFET | Mosfet, N-Ch, 100V, 120A, To-220-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; PG-TO-220-3 | Tube | TO-3; TO-220 | Through Hole | |
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 375000 milliwatts | 375 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
