Infineon Technologies AG Single FETs, MOSFETs IPP040N06N3GXKSA1

Description
MOSFET N-CH 60V 90A TO220-3
  • Single FETs, MOSFETs - IPP040N06N3GXKSA1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP040N06N3GXKSA1 - 111877-IPP040N06N3GXKSA1 - Win Source Electronics
    Win Source Electronics
  • Mosfet, N Channel, 60V, 90A, To-220-3; Channel Type Infineon - 60R2734 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP040N06N3GXKSA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 108087389 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
MOSFET N-CH 60V 90A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPP040N06N3GXKSA1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPP040N06N3GXKSA1
Single FETs, MOSFETs IPP040N06N3GXKSA1
MOSFET N-CH 60V 90A TO220-3

MOSFET N-CH 60V 90A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP040N06N3GXKSA1 - 111877-IPP040N06N3GXKSA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP040N06N3GXKSA1
111877-IPP040N06N3GXKSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP040N06N3GXKSA1 111877-IPP040N06N3GXKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 111877-IPP040N06N3GX KSA1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 188W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 90μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 11000pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 90A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 111877-IPP040N06N3GXKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 188W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 90μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 11000pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 90A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 90A TO220 MOSFET Transistor
278-IPP040N06N3GXKSA1
60V 90A TO220 MOSFET Transistor 278-IPP040N06N3GXKSA1
MOSFET N-CH 60V 90A TO220-3 Product overview: IPP040N06N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 90A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 90A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP040N06N3GXKSA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 90A TO220-3 Product overview: IPP040N06N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 90A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 90A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP040N06N3GXKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP040N06N3GXKSA1
MOSFET IPP040N06N3GXKSA1
MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3

MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3

Buy Now Datasheet
Mosfet, N Channel, 60V, 90A, To-220-3; Channel Type Infineon - 60R2734 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 90A, To-220-3; Channel Type Infineon
60R2734
Mosfet, N Channel, 60V, 90A, To-220-3; Channel Type Infineon 60R2734
MOSFET, N CHANNEL, 60V, 90A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:90A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 90A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:90A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP040N06N3GXKSA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP040N06N3GXKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP040N06N3GXKSA1
MOSFET N-CH 60V 90A TO220-3

MOSFET N-CH 60V 90A TO220-3

Supplier's Site
Transistor - 108087389 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
108087389
Transistor 108087389
MOSFET, N CHANNEL, 60V, 90A, 3-PIN. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CHANNEL, 60V, 90A, 3-PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IPP040N06N3GXKSA1 111877-IPP040N06N3GXKSA1 278-IPP040N06N3GXKSA1 IPP040N06N3GXKSA1 60R2734 IPP040N06N3GXKSA1 108087389
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP040N06N3GXKSA1 60V 90A TO220 MOSFET Transistor MOSFET Mosfet, N Channel, 60V, 90A, To-220-3; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts 60 volts
IDSS 90000 milliamps 90000 milliamps
PD 188000 milliwatts 188000 milliwatts 188 milliwatts
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