N-channel MOSFET designed for high-frequency switching and synchronous rectification, available in TO-220-3, TO-263-3, and TO-262-3 packages. It has a continuous drain current of 100 A at 25°C, a drain-source breakdown voltage of 150 V, and a maximum junction temperature of 175°C. The typical on-state resistance is 7.2 mΩ at 10 A and 10 V gate-source voltage. The device meets AEC-Q200 qualification standards and is RoHS compliant.
MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPP075N15N3 G |
| Product Name | MOSFET |
