Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPP60R125CFD7 IPP60R125CFD7

Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs