The IPP60R125CFD7 is a 600V silicon N-channel MOSFET designed for resonant topologies such as phase-shift full-bridge and LLC converters in server, telecom, and EV charging applications. It is packaged in a PG-TO-220-3 case with a maximum drain-source voltage of 650V, a drain-source on-state resistance of 125 mΩ, and a pulsed drain current of 66 A. The device features a gate charge of 36 nC, a reverse recovery charge of up to 0.94 µC, and a reverse diode commutation speed of 1300 A/µs. It is qualified for industrial use according to JEDEC JESD47/20/22 standards and supports a maximum junction temperature of 150°C. Thermal resistance from junction to case is 1.36°C/W.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPP60R125CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPP60R125CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1250 ohms |
| QG | 36 nC |
