N-Channel 80V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3
MOSFET N-CH 80V 100A TO220-3 Product overview: IPP028N08N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 100A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 100A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP028N08N3GXKSA
Win Source Part Number: 1065281-IPP028N08N3G
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Power Dissipation (Max): 300W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): FDP032N08; IPP020N08N5AKSA1; IPP023N08N5AKSA1; STP260N6F6; IPP027N08N5AKSA1IPP0
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPP028N08N3 G,IPP028N08N3G,IPP02
Base Product Number: IPP028
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 80V 100A TO220-3
MOSFET, N CH, 100A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
MOSFET N-CH 80V 100A TO220-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 448-IPP028N08N3GXKSA1-ND | 278-IPP028N08N3GXKSA1 | 1065281-IPP028N08N3GXKSA1 | IPP028N08N3GXKSA1 | 60R2728 | IPP028N08N3GXKSA1 |
| Product Name | Single FETs, MOSFETs | 80V 100A TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N Ch, 100A, 80V, Pg-To220-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | Tube | SOT3 | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 80 volts | 80 volts | ||||
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts |
