Infineon Technologies AG Single FETs, MOSFETs IPP60R074C6XKSA1

Description
N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3
Request a Quote Datasheet
Description
N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPP60R074C6XKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP60R074C6XKSA1-ND
Single FETs, MOSFETs IPP60R074C6XKSA1-ND
N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3

N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3

Buy Now Datasheet
Single FETs, MOSFETs - IPP60R074C6XKSA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPP60R074C6XKSA1
Single FETs, MOSFETs IPP60R074C6XKSA1
MOSFET N-CH 600V 57.7A TO220-3

MOSFET N-CH 600V 57.7A TO220-3

Supplier's Site Datasheet
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220 - 376-IPP60R074C6XKSA1 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220
376-IPP60R074C6XKSA1
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220 376-IPP60R074C6XKSA1
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220

Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP60R074C6XKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP60R074C6XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP60R074C6XKSA1
MOSFET N-CH 600V 57.7A TO220-3

MOSFET N-CH 600V 57.7A TO220-3

Supplier's Site
Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon - 13AC9080 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon
13AC9080
Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon 13AC9080
MOSFET, N-CH, 600V, 57.7A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:57.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 57.7A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:57.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 108072565 - Radwell International
Willingboro, NJ, United States
Transistor
108072565
Transistor 108072565
POWER FIELD-EFFECT TRANSISTOR, 600V, 0.074OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 600V, 0.074OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Radwell International
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPP60R074C6XKSA1-ND IPP60R074C6XKSA1 376-IPP60R074C6XKSA1 IPP60R074C6XKSA1 13AC9080 108072565
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon Transistor
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 3020 pF @ 100 V TO-3; TO-220
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 600 volts
IDSS 57700 milliamps 57700 milliamps
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