Infineon Technologies AG Single FETs, MOSFETs IPP60R074C6XKSA1

Description
N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3
Request a Quote Datasheet
Description
N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPP60R074C6XKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPP60R074C6XKSA1-ND
Single FETs, MOSFETs IPP60R074C6XKSA1-ND
N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3

N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPP60R074C6XKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPP60R074C6XKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPP60R074C6XKSA1
MOSFET N-CH 600V 57.7A TO220-3

MOSFET N-CH 600V 57.7A TO220-3

Supplier's Site
Transistor - 108072565 - Radwell International
Willingboro, NJ, United States
Transistor
108072565
Transistor 108072565
POWER FIELD-EFFECT TRANSISTOR, 600V, 0.074OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 600V, 0.074OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon - 13AC9080 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon
13AC9080
Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon 13AC9080
MOSFET, N-CH, 600V, 57.7A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:57.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 57.7A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:57.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - IPP60R074C6XKSA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPP60R074C6XKSA1
Single FETs, MOSFETs IPP60R074C6XKSA1
MOSFET N-CH 600V 57.7A TO220-3

MOSFET N-CH 600V 57.7A TO220-3

Supplier's Site Datasheet
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220 - 376-IPP60R074C6XKSA1 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220
376-IPP60R074C6XKSA1
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220 376-IPP60R074C6XKSA1
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220

Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Radwell International Newark, An Avnet Company ODG (Origin Data Global) Utmel Electronic Limited
Product Category Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP60R074C6XKSA1-ND IPP60R074C6XKSA1 108072565 13AC9080 IPP60R074C6XKSA1 376-IPP60R074C6XKSA1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon Single FETs, MOSFETs Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 3020 pF @ 100 V TO-3; TO-220 TO-220; TO-220-3
Packing Method Tube; Tube Tube; Tube
IDSS 57700 milliamps 57700 milliamps
rDS(on) 0.0670 ohms 0.0740 ohms
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