N-Channel 600V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3
POWER FIELD-EFFECT TRANSISTOR, 600V, 0.074OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220
MOSFET N-CH 600V 57.7A TO220-3
MOSFET N-CH 600V 57.7A TO220-3
MOSFET, N-CH, 600V, 57.7A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:57.7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | Radwell International | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPP60R074C6XKSA1-ND | 108072565 | 376-IPP60R074C6XKSA1 | IPP60R074C6XKSA1 | IPP60R074C6XKSA1 | 13AC9080 |
| Product Name | Single FETs, MOSFETs | Transistor | Trans MOSFET N-CH 650V 57.7A 3-Pin(3+Tab) TO-220 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 57.7A, To-220-3; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 | 3020 pF @ 100 V | TO-220; TO-220-3 | TO-3; TO-220 | ||
| Transistor Technology / Material | SILICON | MOSFET (Metal Oxide) | ||||
| MOSFET Operating Mode | Enhancement; ENHANCEMENT MODE | |||||
| rDS(on) | 0.0740 ohms | 0.0670 ohms |
