MOSFET N-CH 80V 80A TO220-3 Product overview: IPP057N08N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 80A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP057N08N3GXKSA
N-Channel 80V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3
Manufacturer: Infineon Technologies
Win Source Part Number: 132681-IPP057N08N3GX
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 90μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 4750pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET N-CH 80V 80A TO220-3
MOSFET Transistor, N Channel, 80 A, 80 V, 4.9 mohm, 10 V, 2.8 V RoHS Compliant: Yes
MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3
MOSFET N-CH 80V 80A TO220-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPP057N08N3GXKSA1 | 448-IPP057N08N3GXKSA1-ND | 132681-IPP057N08N3GXKSA1 | IPP057N08N3GXKSA1 | 60R2741 | IPP057N08N3GXKSA1 | IPP057N08N3GXKSA1 |
| Product Name | 80V 80A TO220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP057N08N3GXKSA1 | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 80 A, 80 V, 4.9 Mohm, 10 V, 2.8 V Rohs Compliant Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | ||||
| Transconductance | 0.0520 kS | ||||||
| PD | 150 milliwatts | 150000 milliwatts | 150000 milliwatts |
