Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP60R145CFD7

Description
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSS127 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSS127 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1 2 3 4
  • 500V-950V N-Channel Power MOSFET - IPP60R145CFD7 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSS127 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSS127 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1 2 3 4
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IPP60R145CFD7 is a 600V CoolMOS\textsuperscript{\texttrademark} CFD7 power transistor designed for resonant switching topologies such as phase-shift full-bridge (ZVS) and LLC converters. It is packaged in a PG-TO-220-3 case with a maximum drain-source voltage of 650V, a drain-source on-state resistance of 145 m\Omega, and a pulsed drain current rating of 58 A. The device features an ultra-fast body diode with a reverse recovery charge of up to 0.9 \mu\text{C} and a peak reverse recovery current of 8 A, along with a diode commutation speed of 1300 A/\mu\text{s}. It is fully qualified according to JEDEC for industrial applications and meets thermal and electrical specifications for operation from -55\degree C to 150\degree C junction temperature. Thermal resistance from junction to case is 1.51 \degree C/W.

Datasheet Summary
Powered by GS/AI

The IPP60R145CFD7 is a 600V CoolMOS\textsuperscript{\texttrademark} CFD7 power transistor designed for resonant switching topologies such as phase-shift full-bridge (ZVS) and LLC converters. It is packaged in a PG-TO-220-3 case with a maximum drain-source voltage of 650V, a drain-source on-state resistance of 145 m\Omega, and a pulsed drain current rating of 58 A. The device features an ultra-fast body diode with a reverse recovery charge of up to 0.9 \mu\text{C} and a peak reverse recovery current of 8 A, along with a diode commutation speed of 1300 A/\mu\text{s}. It is fully qualified according to JEDEC for industrial applications and meets thermal and electrical specifications for operation from -55\degree C to 150\degree C junction temperature. Thermal resistance from junction to case is 1.51 \degree C/W.

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP60R145CFD7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP60R145CFD7
500V-950V N-Channel Power MOSFET IPP60R145CFD7
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS) Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSS127 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSS127 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1 2 3 4

Infineon’s answer to resonant high power topologies

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.


Summary of Features

  • Ultra-fast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Potential Applications

Server, Telecom, EV-charging, SMPS, PC power


Applications

  • 48 V intermediate bus converter (IBC)
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • 1EDI20N12AF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IDH06G65C6 |
    CoolSiC™ Schottky Diodes
  • ICE3PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • BSS127 |
    Small signal/small power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • 1EDB8275F |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IDH06G65C6 |
    CoolSiC™ Schottky Diodes
  • ICE3PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • BSS127 |
    Small signal/small power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant

1
2
3
4

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPP60R145CFD7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1450 ohms
QG 31 nC
Unlock Full Specs
to access all available technical data