Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP50R190CE

Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications Uninterruptible power supplies (UPS) Designers who used this product also designed with 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPP50R190CE - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R190CE - 069065-IPP50R190CE - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPP50R190CE - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET N-CH 500V 18.5A PG-TO-220 - 376-IPP50R190CE - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications Uninterruptible power supplies (UPS) Designers who used this product also designed with 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP50R190CE - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP50R190CE
500V-950V N-Channel Power MOSFET IPP50R190CE
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications Uninterruptible power supplies (UPS) Designers who used this product also designed with 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.


Summary of Features

  • Reduced energy stored in output capacitance (E oss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Q rr )
  • Reduced gate charge (Q g )

Benefits

  • Easy control of switching behavior
  • Better light load efficiency compared to previous CoolMOS™ generations
  • Cost attractive alternative compared to standard MOSFETs
  • Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

  • Consumer
  • Lighting
  • PC silverbox

Applications

  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R190CE - 069065-IPP50R190CE - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R190CE
069065-IPP50R190CE
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R190CE 069065-IPP50R190CE
Manufacturer: Infineon Technologies Win Source Part Number: 069065-IPP50R190CE Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 13V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 18.5A (Tc) Gate-Source Threshold Voltage: 3.5V @ 510μA Max Gate Charge: 6.1nC @ 10V Max Input Capacitance: 1137pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 6.2A, 13V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 069065-IPP50R190CE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 127W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18.5A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 510μA
Max Gate Charge: 6.1nC @ 10V
Max Input Capacitance: 1137pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 6.2A, 13V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IPP50R190CE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPP50R190CE
Single FETs, MOSFETs IPP50R190CE
POWER FIELD-EFFECT TRANSISTOR, 5

POWER FIELD-EFFECT TRANSISTOR, 5

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
500V 18.5A TO220 MOSFET Transistor
2088-IPP50R190CE
500V 18.5A TO220 MOSFET Transistor 2088-IPP50R190CE
MOSFETs N-Ch 500V 18.5A TO220-3 Product overview: IPP50R190CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 18.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18.5A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP50R190CE can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 500V 18.5A TO220-3 Product overview: IPP50R190CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 18.5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18.5A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP50R190CE can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IPP50R190CE
Triode/MOS Tube/Transistor >> MOSFETs IPP50R190CE
TO-220 MOSFETs ROHS

TO-220 MOSFETs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP50R190CE
MOSFET IPP50R190CE
MOSFET N-Ch 500V 18.5A TO220-3

MOSFET N-Ch 500V 18.5A TO220-3

Buy Now Datasheet
MOSFET N-CH 500V 18.5A PG-TO-220 - 376-IPP50R190CE - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 18.5A PG-TO-220
376-IPP50R190CE
MOSFET N-CH 500V 18.5A PG-TO-220 376-IPP50R190CE
MOSFET N-CH 500V 18.5A PG-TO-220

MOSFET N-CH 500V 18.5A PG-TO-220

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP50R190CE 069065-IPP50R190CE IPP50R190CE 2088-IPP50R190CE IPP50R190CE IPP50R190CE 376-IPP50R190CE
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP50R190CE Single FETs, MOSFETs 500V 18.5A TO220 MOSFET Transistor Triode/MOS Tube/Transistor >> MOSFETs MOSFET MOSFET N-CH 500V 18.5A PG-TO-220
Polarity N-Channel; N N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.1900 ohms
QG 47.2 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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