The IPP60R070CFD7 is a 600V CoolMOS™ CFD7 power MOSFET designed for resonant topologies such as phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging applications. It is packaged in a PG-TO-220-3 case with a maximum drain-source voltage of 650V, a on-state resistance of 70 mΩ, and a typical gate charge of 67 nC. The device features an ultra-fast body diode with a reverse recovery charge of 0.57 to 1.14 µC and a maximum diode commutation speed of 1300 A/µs. It meets JEDEC JESD47/20/22 qualification standards for industrial applications and has a thermal resistance from junction to case of 0.8 °C/W. The MOSFET supports pulsed drain currents up to 129 A and is rated for a maximum operating junction temperature of 150 °C.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPP60R070CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0700 ohms |
| QG | 67 nC |
