Optimized power MOSFETs merging high energy efficiency with ease-of-use
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Summary of Features
Efficiency
Ease-of-use
Benefits
Efficiency
Ease-of-use
Potential Applications
Applications
EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs
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600V, 0.12OHM, N-CHANNEL MOSFET, Product overview: IPP60R120P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 0.12OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.12OHM, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP60R120P7 can be used for catalog matching and distributor lookup.
600V, 0.12OHM, N-CHANNEL MOSFET,
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | IPP60R120P7 | 285-IPP60R120P7 | IPP60R120P7 |
| Product Name | 500V-950V N-Channel Power MOSFET | N-Channel 600V 0.12OHM MOSFET Transistor | Specialized ICs |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.1200 ohms | ||
| QG | 36 nC |