Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP60R120P7

Description
Optimized power MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Automotive secondary power distribution unit DIN rail power supplies EV charging Light electric vehicles (LEV) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPP60R120P7 - Infineon Technologies AG
    Infineon Technologies AG
  • Specialized ICs - IPP60R120P7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Optimized power MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Automotive secondary power distribution unit DIN rail power supplies EV charging Light electric vehicles (LEV) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1 2
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Datasheet
Datasheet Summary
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The IPP60R120P7 is a 600V CoolMOS™ P7 power MOSFET designed for high-efficiency switching applications such as PFC and LLC resonant converters. It is packaged in a PG-TO-220-3 case with a maximum continuous drain current of 21.6 A at T₌=150°C and a pulsed drain current of 78 A at T₌=25°C. The device features a maximum on-state resistance of 120 mΩ at T₌=25°C, a total gate charge of 36 nC, and an avalanche energy rating of 82 mJ for single pulses. It exhibits ESD robustness exceeding 2 kV (HBM) and a reverse diode commutation speed of 900 A/µs. Thermal resistance from junction to case is 1.31 °C/W, and junction temperature operates from -55°C to 150°C. The part is fully qualified according to JEDEC standards for industrial applications.

Datasheet Summary
Powered by GS/AI

The IPP60R120P7 is a 600V CoolMOS™ P7 power MOSFET designed for high-efficiency switching applications such as PFC and LLC resonant converters. It is packaged in a PG-TO-220-3 case with a maximum continuous drain current of 21.6 A at T₌=150°C and a pulsed drain current of 78 A at T₌=25°C. The device features a maximum on-state resistance of 120 mΩ at T₌=25°C, a total gate charge of 36 nC, and an avalanche energy rating of 82 mJ for single pulses. It exhibits ESD robustness exceeding 2 kV (HBM) and a reverse diode commutation speed of 900 A/µs. Thermal resistance from junction to case is 1.31 °C/W, and junction temperature operates from -55°C to 150°C. The part is fully qualified according to JEDEC standards for industrial applications.

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP60R120P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP60R120P7
500V-950V N-Channel Power MOSFET IPP60R120P7
Optimized power MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Automotive secondary power distribution unit DIN rail power supplies EV charging Light electric vehicles (LEV) EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1 2

Optimized power MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • Automotive secondary power distribution unit
  • DIN rail power supplies
  • EV charging
  • Light electric vehicles (LEV)

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


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  • 1ED44171N01B |
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  • 2ED2184S06F |
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  • 1EDI20N12AF |
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  • 1EDN8511B |
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  • 1ED44171N01B |
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Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 600V 0.12OHM MOSFET Transistor
285-IPP60R120P7
N-Channel 600V 0.12OHM MOSFET Transistor 285-IPP60R120P7
600V, 0.12OHM, N-CHANNEL MOSFET, Product overview: IPP60R120P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 0.12OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.12OHM, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP60R120P7 can be used for catalog matching and distributor lookup.

600V, 0.12OHM, N-CHANNEL MOSFET, Product overview: IPP60R120P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 0.12OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.12OHM, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP60R120P7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Specialized ICs - IPP60R120P7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Specialized ICs
IPP60R120P7
Specialized ICs IPP60R120P7
600V, 0.12OHM, N-CHANNEL MOSFET,

600V, 0.12OHM, N-CHANNEL MOSFET,

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IPP60R120P7 285-IPP60R120P7 IPP60R120P7
Product Name 500V-950V N-Channel Power MOSFET N-Channel 600V 0.12OHM MOSFET Transistor Specialized ICs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1200 ohms
QG 36 nC
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