Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP60R099P6

Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications DIN rail power supplies Uninterruptible power supplies (UPS) Washing and drying EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPP60R099P6 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications DIN rail power supplies Uninterruptible power supplies (UPS) Washing and drying EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs
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Datasheet
Datasheet Summary
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The IPP60R099P6 is a 600V CoolMOS™ P6 power MOSFET in a TO-220 package, designed for high-efficiency switching applications such as PFC, PWM, and resonant converters. It features a maximum drain-source on-state resistance of 99 mΩ, a typical gate charge of 70 nC, and a pulsed drain current rating of 109 A. The device supports a maximum junction temperature of 150 °C and exhibits high dv/dt ruggedness of 100 V/ns. It is qualified for industrial-grade applications per JEDEC standards and features Pb-free plating and a halogen-free mold compound. The thermal resistance from junction to case is 3.65 °C/W for the FullPAK variant.

Datasheet Summary
Powered by GS/AI

The IPP60R099P6 is a 600V CoolMOS™ P6 power MOSFET in a TO-220 package, designed for high-efficiency switching applications such as PFC, PWM, and resonant converters. It features a maximum drain-source on-state resistance of 99 mΩ, a typical gate charge of 70 nC, and a pulsed drain current rating of 109 A. The device supports a maximum junction temperature of 150 °C and exhibits high dv/dt ruggedness of 100 V/ns. It is qualified for industrial-grade applications per JEDEC standards and features Pb-free plating and a halogen-free mold compound. The thermal resistance from junction to case is 3.65 °C/W for the FullPAK variant.

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500V-950V N-Channel Power MOSFET - IPP60R099P6 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP60R099P6
500V-950V N-Channel Power MOSFET IPP60R099P6
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications DIN rail power supplies Uninterruptible power supplies (UPS) Washing and drying EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1EDN8511B | Gate driver ICs 1ED44171N01B | Gate driver ICs 2EDR8259X | Gate driver ICs

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.


Summary of Features

  • Reduced gate charge (Q g)
  • Higher V th
  • Good body diode ruggedness
  • Optimized integrated R g
  • Improved dv/dt from 50V/ns
  • CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

  • Improved effciency especially in light load condition
  • Better efficiency in soft switching applications due to earlier turn-off
  • Suitable for hard- & soft-switching topologies
  • Optimized balance of efficiency and ease of use and good controllability of switching behavior
  • High robustness and better efficiency
  • Outstanding quality & reliability

Potential Applications

  • PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
  • PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

  • DIN rail power supplies
  • Uninterruptible power supplies (UPS)
  • Washing and drying

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 1ED3125MU12F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED3125MU12F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED3125MU12F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPP60R099P6
MOSFET IPP60R099P6
MOSFET HIGH POWER PRICE/PERFORM

MOSFET HIGH POWER PRICE/PERFORM

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Technical Specifications

  Infineon Technologies AG VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP60R099P6 IPP60R099P6
Product Name 500V-950V N-Channel Power MOSFET MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0990 ohms
QG 70 nC
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