Infineon Technologies AG N-Channel Power MOSFET IPP051N15N5

Description
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications 48 V intermediate bus converter (IBC) DIN rail power supplies General purpose motor drive - variating frequency and voltage Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with 1ED44173N01B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI60N12AF | Gate driver ICs IRS20752L | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IRLML0030PBF-1 | N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC036NE7NS3 G | N-Channel Power MOSFET IPW65R041CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRS4427S | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI60N12AF | Gate driver ICs IRS20752L | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IRLML0030PBF-1 | N-Channel Power MOSFET 1 2 3 4
Request a Quote Datasheet
Description
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications 48 V intermediate bus converter (IBC) DIN rail power supplies General purpose motor drive - variating frequency and voltage Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with 1ED44173N01B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI60N12AF | Gate driver ICs IRS20752L | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IRLML0030PBF-1 | N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC036NE7NS3 G | N-Channel Power MOSFET IPW65R041CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRS4427S | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI60N12AF | Gate driver ICs IRS20752L | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IRLML0030PBF-1 | N-Channel Power MOSFET 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPP051N15N5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPP051N15N5
N-Channel Power MOSFET IPP051N15N5
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications 48 V intermediate bus converter (IBC) DIN rail power supplies General purpose motor drive - variating frequency and voltage Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with 1ED44173N01B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI60N12AF | Gate driver ICs IRS20752L | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IRLML0030PBF-1 | N-Channel Power MOSFET IDH12G65C5 | CoolSiC™ Schottky Diodes IPW65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC036NE7NS3 G | N-Channel Power MOSFET IPW65R041CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRS4427S | Gate driver ICs 1ED44173N01B | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDI60N12AF | Gate driver ICs IRS20752L | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPW60R037CM8 | 600 V CoolMOS™ 8 IRLML0030PBF-1 | N-Channel Power MOSFET 1 2 3 4

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.


Summary of Features

  • Lower R DS(on) without compromising FOM gd and FOM oss
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

Benefits

  • Reduced paralleling
  • Size reduction enabled with SuperSO8 best-in-class
  • Higher power density designs
  • More rugged products
  • System cost reduction
  • Improved EMI behavior

Potential Applications

  • Low voltage drives
  • Telecom
  • Solar

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • General purpose motor drive - variating frequency and voltage
  • Telecommunication infrastructure
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • 1ED44173N01B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 1EDI60N12AF |
    Gate driver ICs
  • IRS20752L |
    Gate driver ICs
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IR11682SPBF |
    Synchronous Rectification ICs
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • IRLML0030PBF-1 |
    N-Channel Power MOSFET
  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPW65R045C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • BSC036NE7NS3 G |
    N-Channel Power MOSFET
  • IPW65R041CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRS4427S |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 1EDI60N12AF |
    Gate driver ICs
  • IRS20752L |
    Gate driver ICs
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IR11682SPBF |
    Synchronous Rectification ICs
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • IRLML0030PBF-1 |
    N-Channel Power MOSFET

1
2
3
4

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPP051N15N5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0051 ohms
Unlock Full Specs
to access all available technical data