The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
Lower R DS(on) without compromising FOM gd and FOM oss
Lower output charge
Ultra-low reverse recovery charge
Increased commutation ruggedness
Higher switching frequency possible
Benefits
Reduced paralleling
Size reduction enabled with SuperSO8 best-in-class
Higher power density designs
More rugged products
System cost reduction
Improved EMI behavior
Potential Applications
Low voltage drives
Telecom
Solar
Applications
48 V intermediate bus converter (IBC)
DIN rail power supplies
General purpose motor drive - variating frequency and voltage
Telecommunication infrastructure
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
1ED44173N01B | Gate driver ICs
2ED2110S06M | Gate driver ICs
1EDI60N12AF | Gate driver ICs
IRS20752L | Gate driver ICs
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IR11682SPBF | Synchronous Rectification ICs
IPW60R037CM8 | 600 V CoolMOS™ 8
IRLML0030PBF-1 | N-Channel Power MOSFET
IDH12G65C5 | CoolSiC™ Schottky Diodes
IPW65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2QR2280G | CoolSET™ Quasi Resonant
BSC036NE7NS3 G | N-Channel Power MOSFET
IPW65R041CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IRS4427S | Gate driver ICs
1ED44173N01B | Gate driver ICs
2ED2110S06M | Gate driver ICs
1EDI60N12AF | Gate driver ICs
IRS20752L | Gate driver ICs
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IR11682SPBF | Synchronous Rectification ICs
IPW60R037CM8 | 600 V CoolMOS™ 8
IRLML0030PBF-1 | N-Channel Power MOSFET
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The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
- Lower R DS(on) without compromising FOM gd and FOM oss
- Lower output charge
- Ultra-low reverse recovery charge
- Increased commutation ruggedness
- Higher switching frequency possible
Benefits
- Reduced paralleling
- Size reduction enabled with SuperSO8 best-in-class
- Higher power density designs
- More rugged products
- System cost reduction
- Improved EMI behavior
Potential Applications
- Low voltage drives
- Telecom
- Solar
Applications
- 48 V intermediate bus converter (IBC)
- DIN rail power supplies
- General purpose motor drive - variating frequency and voltage
- Telecommunication infrastructure
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- 1ED44173N01B |
Gate driver ICs
- 2ED2110S06M |
Gate driver ICs
- 1EDI60N12AF |
Gate driver ICs
- IRS20752L |
Gate driver ICs
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IR11682SPBF |
Synchronous Rectification ICs
- IPW60R037CM8 |
600 V CoolMOS™ 8
- IRLML0030PBF-1 |
N-Channel Power MOSFET
- IDH12G65C5 |
CoolSiC™ Schottky Diodes
- IPW65R045C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2QR2280G |
CoolSET™ Quasi Resonant
- BSC036NE7NS3 G |
N-Channel Power MOSFET
- IPW65R041CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IRS4427S |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- 2ED2110S06M |
Gate driver ICs
- 1EDI60N12AF |
Gate driver ICs
- IRS20752L |
Gate driver ICs
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IR11682SPBF |
Synchronous Rectification ICs
- IPW60R037CM8 |
600 V CoolMOS™ 8
- IRLML0030PBF-1 |
N-Channel Power MOSFET
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