Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPP062NE7N3GXKSA1 IPP062NE7N3GXKSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 1045962-IPP062NE7N3GXKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 70μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 3840pF @ 37.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.2 mOhm @ 73A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 75V 80A TO220-3 Product overview: IPP062NE7N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 80A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPP062NE7N3GXKSA1 can be used for catalog matching and distributor lookup.

N-Channel 75V 80A (Tc) 136W (Tc) Through Hole PG-TO220-3

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