IPP069N20NM6 is an N-channel power MOSFET in a PG-TO220-3 package with a maximum drain-source voltage of 200 V, a continuous drain current of 136 A, and a maximum on-resistance of 6.9 mΩ. It operates at up to 175°C junction temperature and is rated for 516 mJ single-pulse avalanche energy. The device features a gate charge of 73 nC and reverse recovery charge of 391 nC. It is RoHS compliant, halogen-free according to IEC61249-2-21, and fully qualified according to JEDEC for industrial applications. The package includes a drain tab for thermal dissipation.
OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package
IPP069N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability.
The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.
The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS.
Summary of Features
Compared to previous 200 V technology:
Pb-free plating and RoHS compliant
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPP069N20NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPP069N20NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0069 ohms |
