Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP60R060P7

Description
Optimized power MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs DIN rail power supplies Edge computing Industrial robots system solutions for Industry 4.0 Telecommunication infrastructure Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IPP023NE7N3 G | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IDH08G65C6 | CoolSiC™ Schottky Diodes BSC021N08NS5 | N-Channel Power MOSFET IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IPP023NE7N3 G | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IDH08G65C6 | CoolSiC™ Schottky Diodes 1 2 3 4
Request a Quote Datasheet
Description
Optimized power MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs DIN rail power supplies Edge computing Industrial robots system solutions for Industry 4.0 Telecommunication infrastructure Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IPP023NE7N3 G | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IDH08G65C6 | CoolSiC™ Schottky Diodes BSC021N08NS5 | N-Channel Power MOSFET IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IPP023NE7N3 G | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IDH08G65C6 | CoolSiC™ Schottky Diodes 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPP60R060P7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPP60R060P7
500V-950V N-Channel Power MOSFET IPP60R060P7
Optimized power MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs DIN rail power supplies Edge computing Industrial robots system solutions for Industry 4.0 Telecommunication infrastructure Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IPP023NE7N3 G | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IDH08G65C6 | CoolSiC™ Schottky Diodes BSC021N08NS5 | N-Channel Power MOSFET IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IPP023NE7N3 G | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IDH08G65C6 | CoolSiC™ Schottky Diodes 1 2 3 4

Optimized power MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • Complete system solutions for smart TVs
  • DIN rail power supplies
  • Edge computing
  • Industrial robots system solutions for Industry 4.0
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPP023NE7N3 G |
    N-Channel Power MOSFET
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • IDH08G65C6 |
    CoolSiC™ Schottky Diodes
  • BSC021N08NS5 |
    N-Channel Power MOSFET
  • IRS4427S |
    Gate driver ICs
  • 1ED3125MU12F |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED3124MU12F |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPP023NE7N3 G |
    N-Channel Power MOSFET
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • IDH08G65C6 |
    CoolSiC™ Schottky Diodes

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Supplier's Site Datasheet
Singapore
N-Channel 600V 0.06OHM MOSFET Transistor
285-IPP60R060P7
N-Channel 600V 0.06OHM MOSFET Transistor 285-IPP60R060P7
600V, 0.06OHM, N-CHANNEL MOSFET, Product overview: IPP60R060P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 0.06OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.06OHM, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP60R060P7 can be used for catalog matching and distributor lookup.

600V, 0.06OHM, N-CHANNEL MOSFET, Product overview: IPP60R060P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 0.06OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.06OHM, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPP60R060P7 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - IPP60R060P7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPP60R060P7
Single FETs, MOSFETs IPP60R060P7
600V, 0.06OHM, N-CHANNEL MOSFET,

600V, 0.06OHM, N-CHANNEL MOSFET,

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPP60R060P7 285-IPP60R060P7 IPP60R060P7
Product Name 500V-950V N-Channel Power MOSFET N-Channel 600V 0.06OHM MOSFET Transistor Single FETs, MOSFETs
Polarity N-Channel; N N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.0600 ohms
QG 67 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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