Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPP60R190E6

CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

• 600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3
• 650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3

Summary of Features

• Easy control of switching behavior
• Very high commutation ruggedness
• Extremely low losses due to very low Figure of Merit (R _DS(ON)*Q _g) and E _oss)
• Easy to use
• Better light load efficiency compared to C3
• Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
• Better price performance in comparison to previous CoolMOS™ generations
• More efficient, more compact, lighter and cooler

Benefits

• Improved power density
• Improved reliability
• General purpose part can be used in both soft and hard switching topologies
• Better light load effciency
• Improved effciency in hard switching applications
• Improved ease-of-use
• Reduces possible ringing due to pcb layout and package parasitic effects

Potential Applications

• Consumer
• Adapter
• eMobility
• PFC stages for server & telecom
• SMPS
• PC power
• Solar
• Lighting

Manufacturer: Infineon Technologies
Win Source Part Number: 089619-IPP60R190E6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 151W (Tc)
Family Name: IPP60R190E6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 630μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1400pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V
Alternative Parts (Cross-Reference): STP28NM60ND; STP23NM60ND; STP25NM60ND; STP24NM65N;
Introduction Date: May 03, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

MOSFETs N-Ch 650V 20.2A TO220-3 CoolMOS E6 Product overview: IPP60R190E6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 20.2A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 20.2A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPP60R190E6 can be used for catalog matching and distributor lookup.