IC DRAM 512MBIT PAR 60FBGA Product overview: MT47H64M8CB-37E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8CB-37E:
Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 85°C (TC)
Features: SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 267 MHz 500 ps 60-FBGA
Package: Tray
Package: 60-FBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT47H64M8
Categories: Integrated Circuits (ICs)
Case / Package: 60-FBGA
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 5 (48 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 267MHz 500ps 60-FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
IC DRAM 512MBIT PAR 60FBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 267 MHz 500 ps 60-FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H64M8CB-37E:B | MT47H64M8CB-37E:B-ND | MT47H64M8CB-37E:B | MT47H64M8CB-37E:B | MT47H64M8CB-37E:B | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H64M8CB-37E:B | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.5000 ns | 0.5000 ns | 0.5000 ns | |||
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
