Micron Technology, Inc. Memory MT46V64M8P-6T:D TR

Description
IC DRAM 512MBIT PARALLEL 66TSOP
Description
IC DRAM 512MBIT PARALLEL 66TSOP

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Description
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IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

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Memory - MT46V64M8P-6T:D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 66-TSOP

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Integrated Circuits (ICs) - Memory - Memory - MT46V64M8P-6T:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V64M8P-6T:D TR
Integrated Circuits (ICs) - Memory - Memory MT46V64M8P-6T:D TR
IC DRAM 512MBIT PAR 66TSOP

IC DRAM 512MBIT PAR 66TSOP

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V64M8P-6T:D TR MT46V64M8P-6T:D TR MT46V64M8P-6T:D TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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