IC DRAM 2GBIT PAR 60FBGA Product overview: MT47H256M8EB-187E:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H256M8EB-187
Manufacturer: Micron Technology Inc.
Packaging: Tray
Operating Temperature Range: 0°C ~ 85°C (TC)
Package: 60-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 2Gb (256M x 8)
Access Time: 350ps
Part Status: Obsolete(EOL)
Family Name: MT47H256M8
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Manufacturer Homepage: www.micron.com
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-FBGA (9x11.5)
Alternative Parts (Cross-Reference): HXB18T2G800AFL-19F; HXB18T2G800AF-19F; W972GG8JB-18;
Introduction Date: April 17, 2014
ECCN: EAR99
Estimated EOL Date: End of life (Obsolete)
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
IC DRAM 2GBIT PARALLEL 60FBGA
IC DRAM 2GBIT PAR 60FBGA
SDRAM - DDR2 Memory IC 2Gbit Parallel 533 MHz 350 ps 60-FBGA (9x11.5)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H256M8EB-187E:C | MT47H256M8EB-187E:C | MT47H256M8EB-187E:C | MT47H256M8EB-187E:C | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H256M8EB-187E:C | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.3500 ns | 0.3500 ns | 0.3500 ns | 0.3500 ns | |
| Cycle Time | 15 ns | 15 ns | 15 ns | ||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
