Micron Technology, Inc. Memory MT47H64M8CF-25E:G

Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H64M8CF-25E:G-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory IC and Storage Component - 774-MT47H64M8CF-25E:G - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT47H64M8CF-25E:G
Memory IC and Storage Component 774-MT47H64M8CF-25E:G
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8CF-25E:G from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8CF-25E: G can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8CF-25E:G from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8CF-25E:G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT47H64M8CF-25E:G -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H64M8CF-25E:G
Memory - SDRAM - MT47H64M8CF-25E:G
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 400ps Family Name: MT47H64M8 Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 60-FBGA (8x10) Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 400MHz Alternative Parts (Cross-Reference): H5PS5182FFP-S5; H5PS5182FFP-S6; HY5PS12821AFP-Y4; HYB18TC512800B2F-3S; Introduction Date: June 11, 2010 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 400ps
Family Name: MT47H64M8
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA (8x10)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Alternative Parts (Cross-Reference): H5PS5182FFP-S5; H5PS5182FFP-S6; HY5PS12821AFP-Y4; HYB18TC512800B2F-3S;
Introduction Date: June 11, 2010
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - MT47H64M8CF-25E:G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H64M8CF-25E:G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M8CF-25E:G
Integrated Circuits (ICs) - Memory - Memory MT47H64M8CF-25E:G
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H64M8CF-25E:G-ND MT47H64M8CF-25E:G 774-MT47H64M8CF-25E:G MT47H64M8CF-25E:G MT47H64M8CF-25E:G MT47H64M8CF-25E:G
Product Name Memory Memory Memory IC and Storage Component Memory - SDRAM - MT47H64M8CF-25E:G Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip SDRAM - DDR2; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA 60-TFBGA BGA; Tray BGA; 60-FBGA (8x10) BGA; 60-TFBGA BGA
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