IC DRAM 512MBIT PARALLEL 60FBGA
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8CF-25E:G from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8CF-25E:
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 400ps
Family Name: MT47H64M8
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA (8x10)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Alternative Parts (Cross-Reference): H5PS5182FFP-S5; H5PS5182FFP-S6; HY5PS12821AFP-Y4; HYB18TC512800B2F-3S;
Introduction Date: June 11, 2010
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)
IC DRAM 512MBIT PARALLEL 60FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT47H64M8CF-25E:G | 774-MT47H64M8CF-25E:G | MT47H64M8CF-25E:G-ND | MT47H64M8CF-25E:G | MT47H64M8CF-25E:G | MT47H64M8CF-25E:G | |
| Product Name | Memory | Memory IC and Storage Component | Memory - SDRAM - MT47H64M8CF-25E:G | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 400 MHz | 400 MHz | |||||
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
