Micron Technology, Inc. Memory MT47H128M4CF-25E:G TR

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M4CF-25E:G TR
Integrated Circuits (ICs) - Memory - Memory MT47H128M4CF-25E:G TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H128M4CF-25E:G TR MT47H128M4CF-25E:G TR MT47H128M4CF-25E:G TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.4000 ns 0.4000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Data Rate 400 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 736-BQ2203APN - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type Tube
View Details
2 suppliers
Memory - 27S13PC - Quarktwin Technology Ltd.
Rochester Electronics
View Details
3 suppliers
Memory IC and Storage Component - 774-HYE18L256160BF-7.5 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details