IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8B6-3:D TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8B6-3:D TR can be used for catalog matching and distributor lookup.
Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 450ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 333MHz
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H64M8B6-3:D TR | 557-1215-2-ND | MT47H64M8B6-3:D TR | MT47H64M8B6-3:D TR | MT47H64M8B6-3:D TR | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H64M8B6-3:D TR | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | ||
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
