Micron Technology, Inc. Memory MT47H64M8B6-3:D TR

Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-1215-2-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA

Buy Now Datasheet
Memory - SDRAM - MT47H64M8B6-3:D TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H64M8B6-3:D TR
Memory - SDRAM - MT47H64M8B6-3:D TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 450ps Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 60-FBGA Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 333MHz Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 450ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 333MHz
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H64M8B6-3:D TR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT47H64M8B6-3:D TR
Memory IC and Storage Component 774-MT47H64M8B6-3:D TR
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8B6-3:D TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8B6-3:D TR can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8B6-3:D TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8B6-3:D TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT47H64M8B6-3:D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H64M8B6-3:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M8B6-3:D TR
Integrated Circuits (ICs) - Memory - Memory MT47H64M8B6-3:D TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-1215-2-ND 774-MT47H64M8B6-3:D TR MT47H64M8B6-3:D TR MT47H64M8B6-3:D TR MT47H64M8B6-3:D TR
Product Name Memory Memory - SDRAM - MT47H64M8B6-3:D TR Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-FBGA BGA; 60-FBGA BGA; Tape & Reel (TR) BGA; 60-FBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details
Memory - 520966231496 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882727P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type WSON
View Details
Memory - 5962-8764813QYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 512 kbits
View Details