Micron Technology, Inc. Memory - SDRAM - MT47H64M8SH-25E IT:H MT47H64M8SH-25E IT:H

Description
Manufacturer: Micron Technology Inc. Packaging: Bulk Operating Temperature Range: -40°C ~ 95°C (TC) Package: 60-TFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 400ps Family Name: MT47H64M8 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (8x10) Alternative Parts (Cross-Reference): H5PS5182FFR-S5I; H5PS5182FFR-S5L; H5PS5182FFR-S5P; H5PS5182FFR-S6L; Introduction Date: March 17, 2014 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Bulk Operating Temperature Range: -40°C ~ 95°C (TC) Package: 60-TFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 400ps Family Name: MT47H64M8 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (8x10) Alternative Parts (Cross-Reference): H5PS5182FFR-S5I; H5PS5182FFR-S5L; H5PS5182FFR-S5P; H5PS5182FFR-S6L; Introduction Date: March 17, 2014 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT47H64M8SH-25E IT:H -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H64M8SH-25E IT:H
Memory - SDRAM - MT47H64M8SH-25E IT:H
Manufacturer: Micron Technology Inc. Packaging: Bulk Operating Temperature Range: -40°C ~ 95°C (TC) Package: 60-TFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 400ps Family Name: MT47H64M8 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (8x10) Alternative Parts (Cross-Reference): H5PS5182FFR-S5I; H5PS5182FFR-S5L; H5PS5182FFR-S5P; H5PS5182FFR-S6L; Introduction Date: March 17, 2014 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Operating Temperature Range: -40°C ~ 95°C (TC)
Package: 60-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 400ps
Family Name: MT47H64M8
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-FBGA (8x10)
Alternative Parts (Cross-Reference): H5PS5182FFR-S5I; H5PS5182FFR-S5L; H5PS5182FFR-S5P; H5PS5182FFR-S6L;
Introduction Date: March 17, 2014
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

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Memory - MT47H64M8SH-25EIT:H-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)

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IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M8SH-25E IT:H
Integrated Circuits (ICs) - Memory - Memory MT47H64M8SH-25E IT:H
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT47H64M8SH-25E IT:H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

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Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H64M8SH-25EIT:H-ND MT47H64M8SH-25E IT:H MT47H64M8SH-25E IT:H MT47H64M8SH-25E IT:H MT47H64M8SH-25E IT:H
Product Name Memory - SDRAM - MT47H64M8SH-25E IT:H Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip SDRAM - DDR2; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns
Cycle Time 15 ns 15 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
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