Micron Technology, Inc. Memory MT47H64M8SH-25E IT:H

Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H64M8SH-25EIT:H-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)

Buy Now Datasheet
Memory - SDRAM - MT47H64M8SH-25E IT:H -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H64M8SH-25E IT:H
Memory - SDRAM - MT47H64M8SH-25E IT:H
Manufacturer: Micron Technology Inc. Packaging: Bulk Operating Temperature Range: -40°C ~ 95°C (TC) Package: 60-TFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 400ps Family Name: MT47H64M8 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (8x10) Alternative Parts (Cross-Reference): H5PS5182FFR-S5I; H5PS5182FFR-S5L; H5PS5182FFR-S5P; H5PS5182FFR-S6L; Introduction Date: March 17, 2014 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Operating Temperature Range: -40°C ~ 95°C (TC)
Package: 60-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 400ps
Family Name: MT47H64M8
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-FBGA (8x10)
Alternative Parts (Cross-Reference): H5PS5182FFR-S5I; H5PS5182FFR-S5L; H5PS5182FFR-S5P; H5PS5182FFR-S6L;
Introduction Date: March 17, 2014
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT47H64M8SH-25E IT:H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M8SH-25E IT:H
Integrated Circuits (ICs) - Memory - Memory MT47H64M8SH-25E IT:H
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H64M8SH-25EIT:H-ND MT47H64M8SH-25E IT:H MT47H64M8SH-25E IT:H MT47H64M8SH-25E IT:H MT47H64M8SH-25E IT:H
Product Name Memory Memory - SDRAM - MT47H64M8SH-25E IT:H Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - DDR2; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA 60-TFBGA BGA; 60-TFBGA BGA
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