Manufacturer: Micron Technology Inc.
Packaging: Bulk
Operating Temperature Range: -40°C ~ 95°C (TC)
Package: 60-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 400ps
Family Name: MT47H64M8
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-FBGA (8x10)
Alternative Parts (Cross-Reference): H5PS5182FFR-S5I; H5PS5182FFR-S5L; H5PS5182FFR-S5P; H5PS5182FFR-S6L;
Introduction Date: March 17, 2014
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8SH-25E IT:H from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8SH-25E IT:H can be used for catalog matching and distributor lookup.
IC DRAM 512MBIT PARALLEL 60FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA (8x10)
IC DRAM 512MBIT PARALLEL 60FBGA
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT47H64M8SH-25EIT:H-ND | 774-MT47H64M8SH-25E IT:H | MT47H64M8SH-25E IT:H | MT47H64M8SH-25E IT:H | MT47H64M8SH-25E IT:H | MT47H64M8SH-25E IT:H | |
| Product Name | Memory - SDRAM - MT47H64M8SH-25E IT:H | Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Cycle Time | 15 ns | 15 ns | 15 ns | ||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) |
