Micron Technology, Inc. Memory MT47H128M4B6-25E:D TR

Description
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 400MHz 400ps 60-FBGA
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 400MHz 400ps 60-FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H128M4B6-25E:DTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 400MHz 400ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 400MHz 400ps 60-FBGA

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H128M4B6-25E:D TR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT47H128M4B6-25E:D TR
Memory IC and Storage Component 774-MT47H128M4B6-25E:D TR
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H128M4B6-25E:D TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M4B6-25E :D TR can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H128M4B6-25E:D TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M4B6-25E:D TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT47H128M4B6-25E:D TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H128M4B6-25E:D TR
Memory - SDRAM - MT47H128M4B6-25E:D TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (128M x 4) Access Time: 400ps Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 60-FBGA Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 400MHz Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (128M x 4)
Access Time: 400ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H128M4B6-25E:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M4B6-25E:D TR
Integrated Circuits (ICs) - Memory - Memory MT47H128M4B6-25E:D TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-FBGA

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H128M4B6-25E:DTR-ND 774-MT47H128M4B6-25E:D TR MT47H128M4B6-25E:D TR MT47H128M4B6-25E:D TR MT47H128M4B6-25E:D TR
Product Name Memory Memory IC and Storage Component Memory - SDRAM - MT47H128M4B6-25E:D TR Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-FBGA BGA; Tape & Reel (TR) BGA; 60-FBGA BGA; 60-FBGA
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