The MT47H64M16HR-25:H is a DDR2 SDRAM memory component from Quarktwin Technology Ltd., featuring a configuration of 8 Meg x 16 x 8 banks, resulting in a total capacity of 1 Gb. It operates at a voltage of 1.8V ±0.1V and is compatible with JEDEC-standard 1.8V I/O, specifically SSTL_18. The memory supports a differential data strobe option and has an internal architecture that allows for concurrent operations across 8 banks. This memory component offers programmable CAS latency options, with selectable burst lengths of 4 or 8. It has a cycle time of 2.5 ns at CL = 5, corresponding to a data rate of DDR2-800, and is RoHS-compliant. The device is available in an 84-ball FBGA package measuring 8mm x 12.5mm and is suitable for both industrial and automotive temperature ranges. The MT47H64M16HR-25:H also includes features such as on-die termination and supports a refresh count of 8192 cycles.
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Family Name: MT47H64M16
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 84-FBGA (8x12.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Alternative Parts (Cross-Reference): HXB18T1G160AFL-25E; HXB18T1G160AF-25D; HXB18T1G160AF-25E;
Introduction Date: March 21, 2014
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
IC DRAM 1GBIT PARALLEL 84FBGA Product overview: MT47H64M16HR-25:H from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M16HR-25:
IC DRAM 1GBIT PARALLEL 84FBGA
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H64M16HR-25:H | MT47H64M16HR-25:H | MT47H64M16HR-25:H | MT47H64M16HR-25:H | MT47H64M16HR-25:H | |
| Product Name | Memory - SDRAM - MT47H64M16HR-25:H | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | |
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | ||
| Package Type | BGA; 84-FBGA (8x12.5) | BGA; Tray | BGA | BGA; 84-TFBGA | 84-TFBGA |
