Micron Technology, Inc. Memory MT46V64M8CV-5B:J TR

Description
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-FBGA (8x12.5)
Request a Quote Datasheet
Description
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-FBGA (8x12.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V64M8CV-5B:JTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-FBGA (8x12.5)

SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200MHz 700ps 60-FBGA (8x12.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT46V64M8CV-5B:J TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT46V64M8CV-5B:J TR
Memory IC and Storage Component 774-MT46V64M8CV-5B:J TR
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT46V64M8CV-5B:J TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V64M8CV-5B:J TR can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT46V64M8CV-5B:J TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V64M8CV-5B:J TR can be used for catalog matching and distributor lookup.

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory -  - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
Integrated Circuits (ICs) - Memory - Memory
Category: Integrated Circuits (ICs) - Memory - Memory Package: Tape & Reel Temperature Range - Operating: 0°C ~ 70°C (TA) Fake Threat In the Open Market: 31 pct. MSL Level: 3 (168 Hours) Mfr: Micron Technology Inc. Product Status: Obsolete Package / Case: 60-VFBGA Supplier Device Package: 60-FBGA (8x12.5) Base Product Number: MT46V64M8 Technology: SDRAM - DDR Mounting Type: Surface Mount HTSUS: 8542.32.0024 ECCN: EAR99 Voltage - Supply: 2.5V ~ 2.7V Memory Type: Volatile Memory Format: DRAM Memory Size: 512Mbit Memory Organization: 64M x 8 Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 15ns Access Time: 700 ps

Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: 0°C ~ 70°C (TA)
Fake Threat In the Open Market: 31 pct.
MSL Level: 3 (168 Hours)
Mfr: Micron Technology Inc.
Product Status: Obsolete
Package / Case: 60-VFBGA
Supplier Device Package: 60-FBGA (8x12.5)
Base Product Number: MT46V64M8
Technology: SDRAM - DDR
Mounting Type: Surface Mount
HTSUS: 8542.32.0024
ECCN: EAR99
Voltage - Supply: 2.5V ~ 2.7V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 512Mbit
Memory Organization: 64M x 8
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700 ps

Buy Now Datasheet
Memory - MT46V64M8CV-5B:J TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46V64M8CV-5B:J TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V64M8CV-5B:J TR
Integrated Circuits (ICs) - Memory - Memory MT46V64M8CV-5B:J TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46V64M8CV-5B:JTR-ND 774-MT46V64M8CV-5B:J TR MT46V64M8CV-5B:J TR MT46V64M8CV-5B:J TR MT46V64M8CV-5B:J TR MT46V64M8CV-5B:J TR
Product Name Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip SDRAM - DDR; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-VFBGA BGA; Tape & Reel (TR) BGA; 60-VFBGA BGA 60-VFBGA
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