Micron Technology, Inc. Memory MT47H256M4CF-3 IT:H

Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-FBGA (8x10)
Datasheet
Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-FBGA (8x10)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H256M4CF-3 IT:H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-FBGA (8x10)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H256M4CF-3 IT:H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H256M4CF-3 IT:H
Integrated Circuits (ICs) - Memory - Memory MT47H256M4CF-3 IT:H
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H256M4CF-3 IT:H MT47H256M4CF-3 IT:H MT47H256M4CF-3 IT:H
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4500 ns 0.4500 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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