SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-FBGA (8x12.5)
Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Supplier Device Package: 84-FBGA (8x12.5)
Temperature Range - Operating: -40°C ~ 105°C (TC)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,368
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
Part Number Series: MT47H64M16
IC DRAM 1GBIT PARALLEL 84FBGA Product overview: MT47H64M16NF-25E AAT:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M16NF-25E
IC DRAM 1GBIT PARALLEL 84FBGA
DRAM, 64M X 16BIT, -40 TO 105DEG C; DRAM Type:DDR2; DRAM Density:1Gbit; DRAM Memory Configuration:64M x 16bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes
IC DRAM 1GBIT PARALLEL 84FBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT47H64M16NF-25EAAT:M-ND | 774-MT47H64M16NF-25E AAT:M | MT47H64M16NF-25E AAT:M | 80AH8131 | MT47H64M16NF-25E AAT:M | MT47H64M16NF-25E AAT:M | |
| Product Name | Memory | Memory - SDRAM - MT47H64M16NF-25E AAT:M | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Dram, 64M X 16Bit, -40 To 105Deg C; Dram Type Micron | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |||
| Package Type | 84-TFBGA | BGA; Tray | TFBGA | BGA; 84-TFBGA | |||
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 84-TFBGA | 1.7V ~ 1.9V | ||
| Access Time | 0.4000 ns | 0.4000 ns | 2.5 ns | 0.4000 ns | 0.4000 ns |
