Micron Technology, Inc. Memory - SDRAM - MT47H64M8CB-5E:B MT47H64M8CB-5E:B

Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 600ps Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 60-FBGA Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 200MHz Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 600ps Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 60-FBGA Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 200MHz Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT47H64M8CB-5E:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H64M8CB-5E:B
Memory - SDRAM - MT47H64M8CB-5E:B
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 600ps Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 60-FBGA Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 200MHz Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 600ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 200MHz
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H64M8CB-5E:B - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT47H64M8CB-5E:B
Memory IC and Storage Component 774-MT47H64M8CB-5E:B
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8CB-5E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8CB-5E:B can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT47H64M8CB-5E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8CB-5E:B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - MT47H64M8CB-5E:B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 200MHz 600ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 200MHz 600ps 60-FBGA

Buy Now Datasheet
Memory - MT47H64M8CB-5E:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 200 MHz 600 ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mbit Parallel 200 MHz 600 ps 60-FBGA

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H64M8CB-5E:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M8CB-5E:B
Integrated Circuits (ICs) - Memory - Memory MT47H64M8CB-5E:B
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT47H64M8CB-5E:B MT47H64M8CB-5E:B-ND MT47H64M8CB-5E:B MT47H64M8CB-5E:B MT47H64M8CB-5E:B
Product Name Memory - SDRAM - MT47H64M8CB-5E:B Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.6000 ns 0.6000 ns 0.6000 ns 0.6000 ns
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Package Type BGA; 60-FBGA BGA; Tray 60-FBGA BGA; 60-FBGA BGA
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