Micron Technology, Inc. Memory MT47H128M4CF-187E:G

Description
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 533MHz 350ps 60-FBGA (8x10)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 533MHz 350ps 60-FBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H128M4CF-187E:G-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 533MHz 350ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 533MHz 350ps 60-FBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H128M4CF-187E:G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M4CF-187E:G
Integrated Circuits (ICs) - Memory - Memory MT47H128M4CF-187E:G
IC DRAM 512MBIT PAR 60FBGA

IC DRAM 512MBIT PAR 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT47H128M4CF-187E:G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 533 MHz 350 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 512Mbit Parallel 533 MHz 350 ps 60-FBGA (8x10)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H128M4CF-187E:G-ND MT47H128M4CF-187E:G MT47H128M4CF-187E:G MT47H128M4CF-187E:G
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA BGA BGA; 60-TFBGA
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