Micron Technology, Inc. Memory MT48H4M16LFB4-8 IT

Description
SDRAM - Mobile LPSDR Memory IC 64Mb (4M x 16) Parallel 125MHz 6ns 54-VFBGA (8x8)
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Description
SDRAM - Mobile LPSDR Memory IC 64Mb (4M x 16) Parallel 125MHz 6ns 54-VFBGA (8x8)
Request a Quote
Datasheet
Datasheet Summary
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The MT48H4M16LFB4-8 IT is a 64Mbit mobile synchronous DRAM memory chip from Quarktwin Technology Ltd. It features a fully synchronous operation with all signals registered on the positive edge of the system clock, allowing for internal pipelined operation and the ability to change column addresses every clock cycle. The memory chip supports programmable burst lengths of 1, 2, 4, 8, or full page, and includes auto precharge and self-refresh modes, which can be standard or low power. This memory operates with a low voltage power supply of 1.8V for both VDD and VDDQ, and is compatible with LVTTL inputs and outputs. It has an extended operating temperature range of -25¬8C to +85¬8C and an industrial range of -40¬8C to +85¬8C. The device is packaged in a 54-ball FBGA format measuring 8mm x 8mm, and offers options for lead-free packaging. The timing specifications include a cycle time of 8ns at a clock frequency of 125 MHz with a CAS latency of 3. Engineers considering this memory chip should note its features for power-saving modes, including partial array self-refresh and deep power-down modes, which can be beneficial in mobile applications where power efficiency is critical.

Datasheet Summary
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The MT48H4M16LFB4-8 IT is a 64Mbit mobile synchronous DRAM memory chip from Quarktwin Technology Ltd. It features a fully synchronous operation with all signals registered on the positive edge of the system clock, allowing for internal pipelined operation and the ability to change column addresses every clock cycle. The memory chip supports programmable burst lengths of 1, 2, 4, 8, or full page, and includes auto precharge and self-refresh modes, which can be standard or low power. This memory operates with a low voltage power supply of 1.8V for both VDD and VDDQ, and is compatible with LVTTL inputs and outputs. It has an extended operating temperature range of -25¬8C to +85¬8C and an industrial range of -40¬8C to +85¬8C. The device is packaged in a 54-ball FBGA format measuring 8mm x 8mm, and offers options for lead-free packaging. The timing specifications include a cycle time of 8ns at a clock frequency of 125 MHz with a CAS latency of 3. Engineers considering this memory chip should note its features for power-saving modes, including partial array self-refresh and deep power-down modes, which can be beneficial in mobile applications where power efficiency is critical.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT48H4M16LFB4-8IT-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPSDR Memory IC 64Mb (4M x 16) Parallel 125MHz 6ns 54-VFBGA (8x8)

SDRAM - Mobile LPSDR Memory IC 64Mb (4M x 16) Parallel 125MHz 6ns 54-VFBGA (8x8)

Buy Now Datasheet
IC DRAM 64MBIT PARALLEL 54VFBGA

IC DRAM 64MBIT PARALLEL 54VFBGA

Supplier's Site Datasheet
Memory - MT48H4M16LFB4-8 IT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 64Mbit Parallel 125 MHz 6 ns 54-VFBGA (8x8)

SDRAM - Mobile LPSDR Memory IC 64Mbit Parallel 125 MHz 6 ns 54-VFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT48H4M16LFB4-8 IT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT48H4M16LFB4-8 IT
Integrated Circuits (ICs) - Memory - Memory MT48H4M16LFB4-8 IT
IC DRAM 64MBIT PAR 54VFBGA

IC DRAM 64MBIT PAR 54VFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT48H4M16LFB4-8IT-ND MT48H4M16LFB4-8 IT MT48H4M16LFB4-8 IT MT48H4M16LFB4-8 IT
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 54-VFBGA BGA; 54-VFBGA BGA
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