Micron Technology, Inc. Memory - SDRAM - MT47H128M8HQ-187E:E TR MT47H128M8HQ-187E:E TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel package Operating Temperature Range: 0°C ~ 85°C (TC) Package: 60-FBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 1Gb (128M x 8) Access Time: 350ps Part Status: Obsolete(EOL) Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (8x11.5) Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Micron Technology Inc. Packaging: Reel package Operating Temperature Range: 0°C ~ 85°C (TC) Package: 60-FBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 1Gb (128M x 8) Access Time: 350ps Part Status: Obsolete(EOL) Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (8x11.5) Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT47H128M8HQ-187E:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H128M8HQ-187E:E TR
Memory - SDRAM - MT47H128M8HQ-187E:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel package Operating Temperature Range: 0°C ~ 85°C (TC) Package: 60-FBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 1Gb (128M x 8) Access Time: 350ps Part Status: Obsolete(EOL) Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (8x11.5) Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Reel package
Operating Temperature Range: 0°C ~ 85°C (TC)
Package: 60-FBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 1Gb (128M x 8)
Access Time: 350ps
Part Status: Obsolete(EOL)
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-FBGA (8x11.5)
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory - 557-1425-2-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 533MHz 350ps 60-FBGA (8x11.5)

SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 533MHz 350ps 60-FBGA (8x11.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H128M8HQ-187E:E TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT47H128M8HQ-187E:E TR
Memory IC and Storage Component 774-MT47H128M8HQ-187E:E TR
IC DRAM 1GBIT PAR 60FBGA Product overview: MT47H128M8HQ-187E:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M8HQ-187 E:E TR can be used for catalog matching and distributor lookup.

IC DRAM 1GBIT PAR 60FBGA Product overview: MT47H128M8HQ-187E:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M8HQ-187E:E TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H128M8HQ-187E:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M8HQ-187E:E TR
Integrated Circuits (ICs) - Memory - Memory MT47H128M8HQ-187E:E TR
IC DRAM 1GBIT PAR 60FBGA

IC DRAM 1GBIT PAR 60FBGA

Supplier's Site
SDRAM - DDR2 Memory IC 1Gbit Parallel 533 MHz 350 ps 60-FBGA (8x11.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 533 MHz 350 ps 60-FBGA (8x11.5)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-1425-2-ND 774-MT47H128M8HQ-187E:E TR MT47H128M8HQ-187E:E TR MT47H128M8HQ-187E:E TR MT47H128M8HQ-187E:E TR
Product Name Memory - SDRAM - MT47H128M8HQ-187E:E TR Memory Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.3500 ns 0.3500 ns 0.3500 ns 0.3500 ns
Cycle Time 15 ns 15 ns 0.3500 ns
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
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