Micron Technology, Inc. Memory MT47H32M16CC-3:B

Description
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ps 84-FBGA (12x12.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ps 84-FBGA (12x12.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H32M16CC-3:B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ps 84-FBGA (12x12.5)

SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ps 84-FBGA (12x12.5)

Buy Now Datasheet
Memory - SDRAM - MT47H32M16CC-3:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H32M16CC-3:B
Memory - SDRAM - MT47H32M16CC-3:B
Manufacturer: Micron Technology Inc. Packaging: Tray Operating Temperature Range: 0°C ~ 85°C (TC) Package: 84-TFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 450ps Part Status: Obsolete(EOL) Family Name: MT47H32M16 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 84-FBGA (12x12.5) Alternative Parts (Cross-Reference): K4T51163QC-ZLD6; K4T51163QC-ZCD6; K4T51163QG-HCF8; IS46DR16320D-3DBLA2- TR; Introduction Date: November 13, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Tray
Operating Temperature Range: 0°C ~ 85°C (TC)
Package: 84-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 450ps
Part Status: Obsolete(EOL)
Family Name: MT47H32M16
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-FBGA (12x12.5)
Alternative Parts (Cross-Reference): K4T51163QC-ZLD6; K4T51163QC-ZCD6; K4T51163QG-HCF8; IS46DR16320D-3DBLA2-TR;
Introduction Date: November 13, 2003
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H32M16CC-3:B - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT47H32M16CC-3:B
Memory IC and Storage Component 774-MT47H32M16CC-3:B
IC DRAM 512MBIT PARALLEL 84FBGA Product overview: MT47H32M16CC-3:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H32M16CC-3:B can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 84FBGA Product overview: MT47H32M16CC-3:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H32M16CC-3:B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - MT47H32M16CC-3:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-FBGA (12x12.5)

SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-FBGA (12x12.5)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 84FBGA

IC DRAM 512MBIT PARALLEL 84FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H32M16CC-3:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H32M16CC-3:B
Integrated Circuits (ICs) - Memory - Memory MT47H32M16CC-3:B
IC DRAM 512MBIT PARALLEL 84FBGA

IC DRAM 512MBIT PARALLEL 84FBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H32M16CC-3:B-ND 774-MT47H32M16CC-3:B MT47H32M16CC-3:B MT47H32M16CC-3:B MT47H32M16CC-3:B
Product Name Memory Memory - SDRAM - MT47H32M16CC-3:B Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 84-TFBGA BGA; Tray BGA; 84-TFBGA BGA
Supply Voltage 1.7V ~ 1.9V 1.7 V ~ 1.9 V 1.7V ~ 1.9V 1.7V ~ 1.9V 0degC ~ 85degC (TC)
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - AS8F128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 2504789 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details