The MT46V64M8TG-75 L:D TR is a 512Mb DDR SDRAM memory chip featuring a configuration of 16 Meg x 8 with four internal banks. It operates at a voltage of +2.5V ±0.2V and supports a clock rate of 133 MHz with a cycle time of 7.5 ns at a CAS latency of 2.5. The device is designed for high-speed data transfer with a double data rate architecture, allowing two data accesses per clock cycle. It includes features such as bidirectional data strobe (DQS), programmable burst lengths of 2, 4, or 8, and supports auto refresh and self-refresh modes. The memory is packaged in a 66-pin TSOP format, which enhances reliability. This product is suitable for applications requiring moderate speed and power efficiency in memory operations.
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 133MHz 750ps 66-TSOP
IC DRAM 512MBIT PARALLEL 66TSOP
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP
IC DRAM 512MBIT PARALLEL 66TSOP
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-1040-2-ND | MT46V64M8TG-75 L:D TR | MT46V64M8TG-75 L:D TR | MT46V64M8TG-75 L:D TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
| Package Type | TSSOP; "66-TSSOP (0.400"", 10.16mm Width)" | SSOP; TSSOP; 66-TSSOP (0.400\", 10.16mm Width) |
