Micron Technology, Inc. Memory MT47H512M4THN-37E:E TR

Description
SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 267MHz 500ps 63-FBGA (8x10)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 267MHz 500ps 63-FBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H512M4THN-37E:ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 267MHz 500ps 63-FBGA (8x10)

SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 267MHz 500ps 63-FBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H512M4THN-37E:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H512M4THN-37E:E TR
Integrated Circuits (ICs) - Memory - Memory MT47H512M4THN-37E:E TR
IC DRAM 2GBIT PAR 63FBGA

IC DRAM 2GBIT PAR 63FBGA

Supplier's Site
SDRAM - DDR2 Memory IC 2Gbit Parallel 267 MHz 500 ps 63-FBGA (8x10)

SDRAM - DDR2 Memory IC 2Gbit Parallel 267 MHz 500 ps 63-FBGA (8x10)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H512M4THN-37E:ETR-ND MT47H512M4THN-37E:E TR MT47H512M4THN-37E:E TR MT47H512M4THN-37E:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Package Type 63-TFBGA BGA; 63-TFBGA
Supply Voltage 1.7V ~ 1.9V Surface Mount 1.7V ~ 1.9V
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