Micron Technology, Inc. Memory MT47H256M4HQ-3:E TR

Description
SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333MHz 450ps 60-FBGA (8x11.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333MHz 450ps 60-FBGA (8x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-1340-2-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333MHz 450ps 60-FBGA (8x11.5)

SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333MHz 450ps 60-FBGA (8x11.5)

Buy Now Datasheet
Memory - SDRAM - MT47H256M4HQ-3:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H256M4HQ-3:E TR
Memory - SDRAM - MT47H256M4HQ-3:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (256M x 4) Access Time: 450ps Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 60-FBGA (8x11.5) Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 333MHz Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (256M x 4)
Access Time: 450ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA (8x11.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 333MHz
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H256M4HQ-3:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H256M4HQ-3:E TR
Integrated Circuits (ICs) - Memory - Memory MT47H256M4HQ-3:E TR
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT47H256M4HQ-3:E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-FBGA (8x11.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-FBGA (8x11.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-1340-2-ND MT47H256M4HQ-3:E TR MT47H256M4HQ-3:E TR MT47H256M4HQ-3:E TR
Product Name Memory Memory - SDRAM - MT47H256M4HQ-3:E TR Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Package Type 60-FBGA BGA; 60-FBGA (8x11.5) BGA; 60-FBGA
Supply Voltage 1.7V ~ 1.9V 1.7 V ~ 1.9 V Surface Mount 1.7V ~ 1.9V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 54F189LLQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Access Time 32 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - 9021981 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS58C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details