Micron Technology, Inc. Memory MT47H256M4HQ-3:E TR

Description
SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333MHz 450ps 60-FBGA (8x11.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333MHz 450ps 60-FBGA (8x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-1340-2-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333MHz 450ps 60-FBGA (8x11.5)

SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333MHz 450ps 60-FBGA (8x11.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H256M4HQ-3:E TR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT47H256M4HQ-3:E TR
Memory IC and Storage Component 774-MT47H256M4HQ-3:E TR
IC DRAM 1GBIT PARALLEL 60FBGA Product overview: MT47H256M4HQ-3:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H256M4HQ-3:E TR can be used for catalog matching and distributor lookup.

IC DRAM 1GBIT PARALLEL 60FBGA Product overview: MT47H256M4HQ-3:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H256M4HQ-3:E TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT47H256M4HQ-3:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H256M4HQ-3:E TR
Memory - SDRAM - MT47H256M4HQ-3:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (256M x 4) Access Time: 450ps Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 60-FBGA (8x11.5) Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 333MHz Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (256M x 4)
Access Time: 450ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA (8x11.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 333MHz
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory - MT47H256M4HQ-3:E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-FBGA (8x11.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-FBGA (8x11.5)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H256M4HQ-3:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H256M4HQ-3:E TR
Integrated Circuits (ICs) - Memory - Memory MT47H256M4HQ-3:E TR
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-1340-2-ND 774-MT47H256M4HQ-3:E TR MT47H256M4HQ-3:E TR MT47H256M4HQ-3:E TR MT47H256M4HQ-3:E TR
Product Name Memory Memory IC and Storage Component Memory - SDRAM - MT47H256M4HQ-3:E TR Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Package Type 60-FBGA BGA; Tape & Reel (TR) BGA; 60-FBGA (8x11.5) BGA; 60-FBGA
Supply Voltage 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7 V ~ 1.9 V 1.7V ~ 1.9V Surface Mount
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