IC DRAM 4GBIT PARALLEL 63FBGA Product overview: MT47H512M8WTR-25E:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H512M8WTR-25
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 4Gb (512M x 8)
Access Time: 400ps
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 63-FBGA (9x11.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
IC DRAM 4GBIT PARALLEL 63FBGA
IC DRAM 4GBIT PARALLEL 63FBGA
IC DRAM 4GBIT PARALLEL 63FBGA
SDRAM - DDR2 Memory IC 4Gbit Parallel 400 MHz 400 ps 63-FBGA (9x11.5)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H512M8WTR-25E:C | MT47H512M8WTR-25E:C | MT47H512M8WTR-25E:C | MT47H512M8WTR-25E:C | MT47H512M8WTR-25E:C | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H512M8WTR-25E:C | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | |
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
