Micron Technology, Inc. Memory - SDRAM - MT47H512M8WTR-25E:C MT47H512M8WTR-25E:C

Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 4Gb (512M x 8) Access Time: 400ps Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 63-FBGA (9x11.5) Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 400MHz Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 4Gb (512M x 8) Access Time: 400ps Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 63-FBGA (9x11.5) Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 400MHz Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT47H512M8WTR-25E:C -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H512M8WTR-25E:C
Memory - SDRAM - MT47H512M8WTR-25E:C
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 4Gb (512M x 8) Access Time: 400ps Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 63-FBGA (9x11.5) Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 400MHz Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 4Gb (512M x 8)
Access Time: 400ps
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 63-FBGA (9x11.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H512M8WTR-25E:C - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT47H512M8WTR-25E:C
Memory IC and Storage Component 774-MT47H512M8WTR-25E:C
IC DRAM 4GBIT PARALLEL 63FBGA Product overview: MT47H512M8WTR-25E:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H512M8WTR-25 E:C can be used for catalog matching and distributor lookup.

IC DRAM 4GBIT PARALLEL 63FBGA Product overview: MT47H512M8WTR-25E:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H512M8WTR-25E:C can be used for catalog matching and distributor lookup.

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H512M8WTR-25E:C
Integrated Circuits (ICs) - Memory - Memory MT47H512M8WTR-25E:C
IC DRAM 4GBIT PARALLEL 63FBGA

IC DRAM 4GBIT PARALLEL 63FBGA

Supplier's Site
IC DRAM 4GBIT PARALLEL 63FBGA

IC DRAM 4GBIT PARALLEL 63FBGA

Supplier's Site Datasheet
IC DRAM 4GBIT PARALLEL 63FBGA

IC DRAM 4GBIT PARALLEL 63FBGA

Supplier's Site
Memory - MT47H512M8WTR-25E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 4Gbit Parallel 400 MHz 400 ps 63-FBGA (9x11.5)

SDRAM - DDR2 Memory IC 4Gbit Parallel 400 MHz 400 ps 63-FBGA (9x11.5)

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited ODG (Origin Data Global) Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT47H512M8WTR-25E:C MT47H512M8WTR-25E:C MT47H512M8WTR-25E:C MT47H512M8WTR-25E:C MT47H512M8WTR-25E:C
Product Name Memory - SDRAM - MT47H512M8WTR-25E:C Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory Memory
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip SDRAM - DDR2; DRAM Chip DRAM; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Package Type BGA; 63-FBGA (9x11.5) BGA; Tray BGA 63-TFBGA BGA; 63-TFBGA
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