Micron Technology, Inc. Memory MT47H512M4THN-3:E TR

Description
SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333MHz 450ps 63-FBGA (8x10)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333MHz 450ps 63-FBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H512M4THN-3:ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333MHz 450ps 63-FBGA (8x10)

SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333MHz 450ps 63-FBGA (8x10)

Buy Now Datasheet
Memory - SDRAM - MT47H512M4THN-3:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H512M4THN-3:E TR
Memory - SDRAM - MT47H512M4THN-3:E TR
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 85°C (TC) Features: SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333 MHz 450 ps 63-FBGA (8x10) Package: Reel - TR Package: 63-TFBGA Mounting: Surface Mount Part Status: Obsolete Family Name: MT47H512M4 Categories: Integrated Circuits (ICs) Case / Package: 63-FBGA (8x10) ECCN: 3A991B2A Popularity: Medium Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited Quantity per package: 2000 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 85°C (TC)
Features: SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333 MHz 450 ps 63-FBGA (8x10)
Package: Reel - TR
Package: 63-TFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT47H512M4
Categories: Integrated Circuits (ICs)
Case / Package: 63-FBGA (8x10)
ECCN: 3A991B2A
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H512M4THN-3:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H512M4THN-3:E TR
Integrated Circuits (ICs) - Memory - Memory MT47H512M4THN-3:E TR
IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site
Memory - MT47H512M4THN-3:E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 63-FBGA (8x10)

SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 63-FBGA (8x10)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H512M4THN-3:ETR-ND MT47H512M4THN-3:E TR MT47H512M4THN-3:E TR MT47H512M4THN-3:E TR
Product Name Memory Memory - SDRAM - MT47H512M4THN-3:E TR Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Package Type 63-TFBGA BGA; 63-FBGA (8x10) BGA; 63-TFBGA
Supply Voltage 1.7V ~ 1.9V Surface Mount 1.7V ~ 1.9V
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