IC DRAM 2GBIT PARALLEL 63FBGA Product overview: MT47H512M4THN-3:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H512M4THN-3:
Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 85°C (TC)
Features: SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333 MHz 450 ps 63-FBGA (8x10)
Package: Reel - TR
Package: 63-TFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT47H512M4
Categories: Integrated Circuits (ICs)
Case / Package: 63-FBGA (8x10)
ECCN: 3A991B2A
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
SDRAM - DDR2 Memory IC 2Gb (512M x 4) Parallel 333MHz 450ps 63-FBGA (8x10)
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 63-FBGA (8x10)
IC DRAM 2GBIT PARALLEL 63FBGA
IC DRAM 2GBIT PARALLEL 63FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H512M4THN-3:E TR | MT47H512M4THN-3:ETR-ND | MT47H512M4THN-3:E TR | MT47H512M4THN-3:E TR | MT47H512M4THN-3:E TR | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H512M4THN-3:E TR | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | |||
| Cycle Time | 15 ns | 0.4500 ns | ||||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
