Micron Technology, Inc. Memory MT47H64M16HR-25E L:H

Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
Datasheet
Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H64M16HR-25E L:H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H64M16HR-25E L:H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M16HR-25E L:H
Integrated Circuits (ICs) - Memory - Memory MT47H64M16HR-25E L:H
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H64M16HR-25E L:H MT47H64M16HR-25E L:H MT47H64M16HR-25E L:H MT47H64M16HR-25E L:H
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip SDRAM - DDR2; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits
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