Manufacturer: Micron Technology Inc.
Packaging: Reel package
Operating Temperature Range: 0°C ~ 85°C (TC)
Package: 60-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 2Gb (512M x 4)
Access Time: 400ps
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-FBGA (9x11.5)
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
IC DRAM 2GBIT PARALLEL 60FBGA Product overview: MT47H512M4EB-25E:C TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H512M4EB-25E
IC DRAM 2GBIT PARALLEL 60FBGA
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)
IC DRAM 2GBIT PARALLEL 60FBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H512M4EB-25E:C TR | MT47H512M4EB-25E:C TR | MT47H512M4EB-25E:C TR | MT47H512M4EB-25E:C TR | |
| Product Name | Memory - SDRAM - MT47H512M4EB-25E:C TR | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | |
| Cycle Time | 15 ns | 15 ns | 15 ns | ||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
