The MT47H64M16BT-5E:A is a DDR2 SDRAM memory chip from Quarktwin Technology Ltd. It features a configuration of 64 Meg x 16 with 8 internal banks, allowing for concurrent operations. The device operates at a voltage of +1.8V ±0.1V and is RoHS compliant. It supports JEDEC standard 1.8V I/O and includes options for differential data strobe and duplicate output strobe for x8 configurations. The memory supports programmable CAS latency and burst lengths of 4 or 8, with a cycle time of 5.0ns at CL = 3, corresponding to a data rate of 400 MHz. The chip is available in a 92-ball FBGA package measuring 11mm x 19mm. Additionally, it offers an industrial temperature option, making it suitable for a range of applications. This product is ideal for engineers looking for reliable DDR2 memory solutions with specific performance and operational characteristics.
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 200MHz 600ps 92-FBGA (11x19)
Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 85°C (TC)
Features: SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 200 MHz 600 ps 92-FBGA (11x19)
Package: Box
Package: 92-TFBGA
Mounting: Surface Mount
Part Status: Discontinued at Digi-Key
Family Name: MT47H64M16
Categories: Integrated Circuits (ICs)
Case / Package: 92-FBGA (11x19)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 5 (48 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0032
IC DRAM 1GBIT PARALLEL 92FBGA Product overview: MT47H64M16BT-5E:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M16BT-5E:
IC DRAM 1GBIT PARALLEL 92FBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 200 MHz 600 ps 92-FBGA (11x19)
IC DRAM 1GBIT PARALLEL 92FBGA
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT47H64M16BT-5E:A-ND | 774-MT47H64M16BT-5E:A | MT47H64M16BT-5E:A | MT47H64M16BT-5E:A | MT47H64M16BT-5E:A | |
| Product Name | Memory | Memory - SDRAM - MT47H64M16BT-5E:A | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | ||
| Package Type | 92-TFBGA | BGA; 92-FBGA (11x19) | BGA; Box | BGA; 92-TFBGA | BGA | |
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 0degC ~ 85degC (TC) |
